PLCC32 TSOP32
KEY FEATURES
5 Volt Read, Program, and Erase
– Minimizes system-level power
requirements
High Performance
– Access times as fast as 55 ns
Low Power Consumption
– 20 mA typical active read current
– 30 mA typical program/erase current
– 5 µA maximum CMOS standby current
Compatible with JEDEC Standards
– Package, pinout and command-set
compatible with the single-supply Flash
device standard
– Provides superior inadvertent write
protection
Sector Erase Architecture
– Eight equal size sectors of 64K bytes
each
– A command can erase any combination of
sectors
– Supports full chip erase
Erase Suspend/Resume
– Temporarily suspends a sector erase
operation to allow data to be read from, or
programmed into, any sector not being
erased
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| 型号 | 厂商 | 描述 | 文件大小 | 下载 |
|---|---|---|---|---|
| HY29F040AT-90 Megabit (512K x 8), 5 Volt-only, Flash Memory | HITACHI | PLCC32 TSOP32 | 369 |
| 型号 | 厂商 | 封装 | 描述 | 资料 | 采购 |
|---|---|---|---|---|---|
| HY29F002TC-45 | HYUNDAI | PLCC-32 | 全新原装 |  |
|
| HY29F002TC-70 | HYUNDAI | PLCC-32 | 全新原装 | |
|
| HY29F040AC-70 | HYNIX | N／A | N／A | |
|
| HY29F002TC-90 | HYUNDAI | PLCC-32 | 全新原装 | |
|
| HY29F040AT-90 | HYUNDAI | SOP-32 | Megabit (512K x 8), 5 Volt-only, Flash Memory | |
|
| HY29F040AC-90 | HYNIX | PLCC-32 | 全新原装 | |
|
| HY29F002TT-90 | N／A | N／A | 散新 | |
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