X-band Discrete Power pHEMT
Features
·Frequency Range: DC - 12 GHz
·> 36 dBm Nominal Psat
·59% Maximum PAE
·11 dB Nominal Power Gain
·Suitable for high reliability applications
·4mm x 0.35μm Power pHEMT
·Nominal Bias Vd = 8-12V, Idq = 300-500mA
(Under RF Drive, Id rises from 300mA to 960mA)
·Chip Dimensions: 0.57 x 1.30 x 0.10 mm
(0.022 x 0.051 x 0.004 in)
特别说明：如遇压缩包有密码，请在压缩包中注释说明中查找。
特别提示：文章标题资源或是文件大小标注为0的资源，不提供直接下载请根据上述说明查找相应的书籍。
| 型号 | 厂商 | 描述 | 文件大小 | 下载 |
|---|---|---|---|---|
| TGF2021-04 | TriQuint | X-band Discrete Power pHEMT | 148 | |
| TGF2021-12 | TriQuint | X-band Discrete Power pHEMT | 153 | |
| TGF2022-48 | TriQuint | Ku-band Discrete Power pHEMT | 138 | |
| TGF2021-02 | TriQuint | X-band Discrete Power pHEMT | 147 | |
| TGF2021-08 | TriQuint | X-band Discrete Power pHEMT | 145 | |
| TGF2022-12 | TriQuint | Ku-band Discrete Power pHEMT | 139 | |
| TGF2022-06 | TriQuint | Ku-band Discrete Power pHEMT | 198 | |
| TGF2022-60 | TriQuint | Ku-band Discrete Power pHEMT | 97 | |
| TGF2022-24 | TriQuint | Ku-band Discrete Power pHEMT | 153 | |
| TGF2021-01 | TriQuint | X-band Discrete Power pHEMT | 176 |
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