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MT9VDDF6472G-40B IC产品资料

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MT9VDDF6472G-40B IC产品资料
资料编号:
501370
资料标题:
MT9VDDF6472G-40B
品 牌:
MICRON
点击次数:
214
文件大小:
735
资料属性:
....

MT9VDDF6472G-40B 资料标题简介

DDR SDRAM REGISTERED DIMM

MT9VDDF6472G-40B 资料关键信息

Features
? 184-pin, dual, in-line memory module (DIMM)
? Fast data transfer rates: PC1600, PC2100, or PC2700
? Utilizes 200 MT/s, 266 MT/s, and 333 MT/s DDR
SDRAM components
? Registered Inputs with one-clock delay
? Phase-lock loop (PLL) clock driver to reduce loading
? Supports ECC error detection and correction
? 256MB (32 Meg x 72); and 512MB (64 Meg x 72)
? VDD = VDDQ = +2.5V
? VDDSPD = +2.3V to +3.6V
? 2.5V I/O (SSTL_2 compatible)
? Commands entered on each positive CK edge
? DQS edge-aligned with data for READs; centeraligned
with data for WRITEs
? Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
? Bidirectional data strobe (DQS) transmitted/received
with data—i.e., source-synchronous data capture
? Differential clock inputs CK and CK#
? Four internal device banks for concurrent operation
? Programmable burst lengths: 2, 4, or 8
? Auto precharge option
? Auto Refresh and Self Refresh Modes
? 7.8125?s maximum average periodic refresh
interval
? Serial Presence-Detect (SPD) with EEPROM
? Programmable READ CAS latency
? Gold edge contacts

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