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M470T3354EZ3-LCC IC产品资料

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M470T3354EZ3-LCC IC产品资料
资料编号:
539435
资料标题:
M470T3354EZ3-LCC
品 牌:
SAMSUNG
点击次数:
298
文件大小:
370
资料属性:
....

M470T3354EZ3-LCC 资料标题简介

DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb E-die 64bit Non-ECC

M470T3354EZ3-LCC 资料关键信息

FEATURES
· Performance range
· JEDEC standard VDD = 1.8V ± 0.1V Power Supply
· VDDQ = 1.8V ± 0.1V
· 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
· 4 Banks
· Posted CAS
· Programmable CAS Latency: 3, 4, 5, 6
· Programmable Additive Latency: 0, 1 , 2 , 3, 4, 5
· Write Latency(WL) = Read Latency(RL) -1
· Burst Length: 4 , 8(Interleave/Nibble sequential)
· Programmable Sequential / Interleave Burst Mode
· Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
· Off-Chip Driver(OCD) Impedance Adjustment
· On Die Termination with selectable values(50/75/150 ohms or disable)
· Average Refresh Period 7.8us at lower than a TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
- Support High Temperature Self-Refresh rate enable feature
· Package: 60ball FBGA - 64Mx8 , 84ball FBGA - 32Mx16
· All of base components are Lead-Free and RoHS compliant

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M470T3354EZ3-LCC 相关资料推介

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