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K4T51043QE-ZLD5 IC产品资料

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K4T51043QE-ZLD5 IC产品资料
资料编号:
540293
资料标题:
K4T51043QE-ZLD5
品 牌:
SAMSUNG
点击次数:
160
文件大小:
1021
资料属性:
....

K4T51043QE-ZLD5 资料标题简介

512Mb E-die DDR2 SDRAM Specification

K4T51043QE-ZLD5 资料关键信息

FEATURES
·JEDEC standard VDD = 1.8V ?0.1V Power Supply
·VDDQ = 1.8V ?0.1V
·200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/
pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/
sec/pin
·4 Banks
·Posted CAS
·Programmable CAS Latency: 3, 4, 5, 6
·Programmable Additive Latency: 0, 1 , 2 , 3, 4 , 5
·Write Latency(WL) = Read Latency(RL) -1
·Burst Length: 4 , 8(Interleave/Nibble sequential)
·Programmable Sequential / Interleave Burst Mode
·Bi-directional Differential Data-Strobe (Single-ended datastrobe
is an optional feature)
·Off-Chip Driver(OCD) Impedance Adjustment
·On Die Termination
·Special Function Support
-50ohm ODT
-High Temperature Self-Refresh rate enable
·Average Refresh Period 7.8us at lower than TCASE 85癈,
3.9us at 85℃ < TCASE < 95 ℃
·All of products are Lead-Free and RoHS compliant

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