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K7I641882M-EC30 IC产品资料

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K7I641882M-EC30 IC产品资料
资料编号:
540699
资料标题:
K7I641882M-EC30
品 牌:
SAMSUNG
点击次数:
235
文件大小:
412
资料属性:
....

K7I641882M-EC30 资料标题简介

2Mx36-bit, 4Mx18-bit DDRII CIO b2 SRAM

K7I641882M-EC30 资料关键信息

FEATURES
? 1.8V+0.1V/-0.1V Power Supply.
? DLL circuitry for wide output data valid window and future frequency
scaling.
? I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O,
1.8V+0.1V/-0.1V for 1.8V I/O.
? Pipelined, double-data rate operation.
? Common data input/output bus.
? HSTL I/O
? Full data coherency, providing most current data.
? Synchronous pipeline read with self timed late write.
? Registered address, control and data input/output.
? DDR(Double Data Rate) Interface on read and write ports.
? Fixed 2-bit burst for both read and write operation.
? Clock-stop supports to reduce current.
? Two input clocks(K and K) for accurate DDR timing at clock
rising edges only.
? Two input clocks for output data(C and C) to minimize
clock-skew and flight-time mismatches.
? Two echo clocks (CQ and CQ) to enhance output data
traceability.
? Single address bus.
? Byte write function.
? Simple depth expansion with no data contention.
? Programmable output impedance.
? JTAG 1149.1 compatible test access port.
? 165FBGA(11x15 ball array FBGA) with body size of 15x17mm
& Lead Free

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K7I641882M-EC30 相关资料推介

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K7I641882M-EC30 SAMSUNG 2Mx36-bit, 4Mx18-bit DDRII CIO b2 SRAM 412
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K7I641884M-EI25 SAMSUNG 1Mx36-bit, 2Mx18-bit DDRII CIO b4 SRAM 412
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K7I641882M-FI16 SAMSUNG 2Mx36-bit, 4Mx18-bit DDRII CIO b2 SRAM 412
K7I641882M-EI30 SAMSUNG 2Mx36-bit, 4Mx18-bit DDRII CIO b2 SRAM 412
K7I641884M-EC30 SAMSUNG 1Mx36-bit, 2Mx18-bit DDRII CIO b4 SRAM 412
K7I641882M SAMSUNG 2Mx36-bit, 4Mx18-bit DDRII CIO b2 SRAM 412
K7I641884M SAMSUNG 1Mx36-bit, 2Mx18-bit DDRII CIO b4 SRAM 412
K7I641882M-FC20 SAMSUNG 2Mx36-bit, 4Mx18-bit DDRII CIO b2 SRAM 412
K7I641882M-EI25 SAMSUNG 2Mx36-bit, 4Mx18-bit DDRII CIO b2 SRAM 412
K7I641882M-FC16 SAMSUNG 2Mx36-bit, 4Mx18-bit DDRII CIO b2 SRAM 412
K7I641882M-FC30 SAMSUNG 2Mx36-bit, 4Mx18-bit DDRII CIO b2 SRAM 412
K7I641884M-FC16 SAMSUNG 1Mx36-bit, 2Mx18-bit DDRII CIO b4 SRAM 412
K7I641882M-FI20 SAMSUNG 2Mx36-bit, 4Mx18-bit DDRII CIO b2 SRAM 412
K7I641882M-EC25 SAMSUNG 2Mx36-bit, 4Mx18-bit DDRII CIO b2 SRAM 412
K7I641884M-EC25 SAMSUNG 1Mx36-bit, 2Mx18-bit DDRII CIO b4 SRAM 412
K7I641882M-FC25 SAMSUNG 2Mx36-bit, 4Mx18-bit DDRII CIO b2 SRAM 412
K7I641884M-EI30 SAMSUNG 1Mx36-bit, 2Mx18-bit DDRII CIO b4 SRAM 412
K7I641884M-FC20 SAMSUNG 1Mx36-bit, 2Mx18-bit DDRII CIO b4 SRAM 412

K7I641882M-EC30 相关产品库存信息

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