产品信息: 电子元器件 | 推荐型号 | 新进货源 | 最近更新库存 | 历史排行榜 | 本月排行榜 | 本周热门型号 | 相关图片浏览
全部分类 > 电子元器件
超过百万家电维修资料以及家电维修论坛13年文件数据 免费开放下载
资料名称或型号:
搜索分类:
电路图纸 IC规格书 I2C总线资料 存储器数据文件 电子书籍 书报目录 其他..

VN02N IC产品库存

VN02N:HIGH SIDE SMART POWER SOLID STATE RELAY
库存编号:
107606
产品型号:
VN02N
厂商:
ST
封装:
TO-220-5
库存数量:
383
参考价:
0
起订量:
25
点击率:
580
PDF搜索:
下载
立即订购:
VN02N
联系电话:
0755-82516777

VN02N 产品描述

HIGH SIDE SMART POWER SOLID STATE RELAY

VN02N 产品简介

. OUTPUT CURRENT (CONTINUOUS): 6A @
Tc=25oC
. 5V LOGIC LEVEL COMPATIBLE INPUT
. THERMAL SHUT-DOWN
. UNDER VOLTAGE SHUT-DOWN
. OPEN DRAIN DIAGNOSTIC OUTPUT
. VERY LOW STAND-BY POWER
DISSIPATION
DESCRIPTION
The VN02N is a monolithic device made using
SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The input control is 5V logic level compatible.
The open drain diagnostic output indicates open
circuit (no load) and over temperature status.
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open circuit (no load) and over
temperature conditions. The output signals are
processed by internal logic.
To protect the device against short circuit and
over-current condition, the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140 oC. When the
temperature returns to about 125 oC the switch is
automatically turned on again.
In short circuit conditions the protection reacts
with virtually no delay, the sensor being located in
the region of the die where the heat is generated.
PROTECTING THE DEVICE AGAINST REVERSE
BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
The consequences of the voltage drop across
this diode are as follows:
– If the input is pulled to power GND, a negative
voltage of -VF is seen by the device. (VIL, VIH
thresholds and VSTAT are increased by VF with
respect to power GND).
– The undervoltage shutdown level is increased
by VF.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of VIH, VIL and VSTAT takes
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.>

VN02N 产品图片

VN02N 的图片暂无收录。

VN02N 相关库存

型号 厂商 封装 描述 资料 采购
VN02N ST TO-220-5 HIGH SIDE SMART POWER SOLID STATE RELAY
VN02NPT ST TO-252 固态继电器


VN02N 相关产品资料

型号 厂商 描述 文件大小 下载
VN02NPT VN02NSP ST 311
VN02N ST 194
VN02N 0
VN02N ST 275
VN02NSP VN02NPT ST 311
VN02NPT,VN02NSP 0


VN02N 论坛相关



联系方式

联系时间:每周一至周五
   上午9.00至11:45,
   下午13:30至17.50
联系电话:
   0755-82516668,82516777
联系传真:
   0755-82516669
业务联系QQ:
   QQ一:882222 ,QQ二:308917
点这里询问产品价格

QQ:308917
IC库存速查:- 0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
IC资料速查:- 0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

---广告---